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羅斌森

  • FCP165N65S3

  • Manufacturer : ON Semiconductor
    Series : SuperFET? III
    Part Status : Active
    FET Type : N-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 650V
    Current - Continuous Drain (Id) @ 25°C : 19A (Tc)
    Drive Voltage (Max Rds On, Min Rds On) : 10V
    Rds On (Max) @ Id, Vgs : 165 mOhm @ 9.5A, 10V
    Vgs(th) (Max) @ Id : 4.5V @ 1.9mA
    Gate Charge (Qg) (Max) @ Vgs : 39nC @ 10V
    Vgs (Max) : ±30V
    Input Capacitance (Ciss) (Max) @ Vds : 1500pF @ 400V
    Power Dissipation (Max) : 154W (Tc)
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Through Hole
    Supplier Device Package : TO-220-3
    Package / Case : TO-220-3

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