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羅斌森
  • NST847BPDP6T5G

  • Manufacturer : ON Semiconductor
    Packaging : Cut Tape (CT)
    Alternate Packaging
    Part Status : Active
    Transistor Type : NPN, PNP
    Current - Collector (Ic) (Max) : 100mA
    Voltage - Collector Emitter Breakdown (Max) : 45V
    Vce Saturation (Max) @ Ib, Ic : 600mV @ 5mA, 100mA / 700mV @ 5mA, 100mA
    Current - Collector Cutoff (Max) : 15nA (ICBO)
    DC Current Gain (hFE) (Min) @ Ic, Vce : 200 @ 2mA, 5V / 220 @ 2mA, 5V
    Power - Max : 350mW
    Frequency - Transition : 100MHz
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Surface Mount
    Package / Case : SOT-963
    Supplier Device Package : SOT-963

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