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羅斌森

  • NSS40300DDR2G

  • Manufacturer : ON Semiconductor
    Packaging : Cut Tape (CT)
    Alternate Packaging
    Part Status : Active
    Transistor Type : 2 PNP (Dual)
    Current - Collector (Ic) (Max) : 3A
    Voltage - Collector Emitter Breakdown (Max) : 40V
    Vce Saturation (Max) @ Ib, Ic : 170mV @ 200mA, 2A
    Current - Collector Cutoff (Max) : 100nA (ICBO)
    DC Current Gain (hFE) (Min) @ Ic, Vce : 180 @ 1A, 2V
    Power - Max : 653mW
    Frequency - Transition : 100MHz
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Surface Mount
    Package / Case : 8-SOIC (0.154", 3.90mm Width)
    Supplier Device Package : 8-SOIC

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