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羅斌森

  • NTTFS6H850NTAG

  • Manufacturer : ON Semiconductor
    Packaging : Cut Tape (CT)
    Alternate Packaging
    Part Status : Active
    FET Type : N-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 80V
    Current - Continuous Drain (Id) @ 25°C : 11A (Ta), 68A (Tc)
    Drive Voltage (Max Rds On, Min Rds On) : 6V, 10V
    Rds On (Max) @ Id, Vgs : 9.5 mOhm @ 10A, 10V
    Vgs(th) (Max) @ Id : 4V @ 70μA
    Gate Charge (Qg) (Max) @ Vgs : 19nC @ 10V
    Vgs (Max) : ±20V
    Input Capacitance (Ciss) (Max) @ Vds : 1140pF @ 40V
    Power Dissipation (Max) : 3.2W (Ta), 107W (Tc)
    Operating Temperature : -55°C ~ 175°C (TJ)
    Mounting Type : Surface Mount
    Supplier Device Package : 8-WDFN (3.3x3.3)
    Package / Case : 8-PowerWDFN

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