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羅斌森

  • NTMFS6H818NT1G

  • Manufacturer : ON Semiconductor
    Packaging : Cut Tape (CT)
    Alternate Packaging
    Part Status : Active
    FET Type : N-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 80V
    Current - Continuous Drain (Id) @ 25°C : 20A (Ta), 123A (Tc)
    Drive Voltage (Max Rds On, Min Rds On) : 6V, 10V
    Rds On (Max) @ Id, Vgs : 3.7 mOhm @ 20A, 10V
    Vgs(th) (Max) @ Id : 4V @ 190μA
    Gate Charge (Qg) (Max) @ Vgs : 46nC @ 10V
    Vgs (Max) : ±20V
    Input Capacitance (Ciss) (Max) @ Vds : 3100pF @ 40V
    Power Dissipation (Max) : 3.8W (Ta), 136W (Tc)
    Operating Temperature : -55°C ~ 175°C (TJ)
    Mounting Type : Surface Mount
    Supplier Device Package : 5-DFN (5x6) (8-SOFL)
    Package / Case : 8-PowerTDFN, 5 Leads

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