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羅斌森

  • NTMFS4C10NT1G

  • Manufacturer : ON Semiconductor
    Packaging : Cut Tape (CT)
    Alternate Packaging
    Part Status : Active
    FET Type : N-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 30V
    Current - Continuous Drain (Id) @ 25°C : 8.2A (Ta)
    Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
    Rds On (Max) @ Id, Vgs : 6.95 mOhm @ 30A, 10V
    Vgs(th) (Max) @ Id : 2.2V @ 250μA
    Gate Charge (Qg) (Max) @ Vgs : 9.7nC @ 4.5V
    Vgs (Max) : ±20V
    Input Capacitance (Ciss) (Max) @ Vds : 987pF @ 15V
    Power Dissipation (Max) : 750mW (Ta), 23.6W (Tc)
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Surface Mount
    Supplier Device Package : 5-DFN (5x6) (8-SOFL)
    Package / Case : 8-PowerTDFN

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