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羅斌森

  • NTE4153NT1G

  • Manufacturer : ON Semiconductor
    Packaging : Cut Tape (CT)
    Alternate Packaging
    Part Status : Active
    FET Type : N-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 20V
    Current - Continuous Drain (Id) @ 25°C : 915mA (Ta)
    Drive Voltage (Max Rds On, Min Rds On) : 1.5V, 4.5V
    Rds On (Max) @ Id, Vgs : 230 mOhm @ 600mA, 4.5V
    Vgs(th) (Max) @ Id : 1.1V @ 250μA
    Gate Charge (Qg) (Max) @ Vgs : 1.82nC @ 4.5V
    Vgs (Max) : ±6V
    Input Capacitance (Ciss) (Max) @ Vds : 110pF @ 16V
    Power Dissipation (Max) : 300mW (Tj)
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Surface Mount
    Supplier Device Package : SC-89-3
    Package / Case : SC-89, SOT-490

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