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羅斌森

  • NDT01N60T1G

  • Manufacturer : ON Semiconductor
    Packaging : Tape & Reel (TR)
    Part Status : Obsolete
    FET Type : N-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 600V
    Current - Continuous Drain (Id) @ 25°C : 400mA (Tc)
    Drive Voltage (Max Rds On, Min Rds On) : 10V
    Rds On (Max) @ Id, Vgs : 8.5 Ohm @ 200mA, 10V
    Vgs(th) (Max) @ Id : 3.7V @ 50μA
    Gate Charge (Qg) (Max) @ Vgs : 7.2nC @ 10V
    Vgs (Max) : ±30V
    Input Capacitance (Ciss) (Max) @ Vds : 160pF @ 25V
    Power Dissipation (Max) : 2.5W (Tc)
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Surface Mount
    Supplier Device Package : SOT-223 (TO-261)
    Package / Case : TO-261-4, TO-261AA

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