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羅斌森

  • 2N5657G

  • Manufacturer : ON Semiconductor
    Packaging : Bulk
    Part Status : Active
    Transistor Type : NPN
    Current - Collector (Ic) (Max) : 500mA
    Voltage - Collector Emitter Breakdown (Max) : 350V
    Vce Saturation (Max) @ Ib, Ic : 10V @ 100mA, 500mA
    Current - Collector Cutoff (Max) : 100μA
    DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 100mA, 10V
    Power - Max : 20W
    Frequency - Transition : 10MHz
    Operating Temperature : -65°C ~ 150°C (TJ)
    Mounting Type : Through Hole
    Package / Case : TO-225AA, TO-126-3
    Supplier Device Package : TO-225AA

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