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羅斌森

  • MMBT5550LT1G

  • Manufacturer : ON Semiconductor
    Packaging : Cut Tape (CT)
    Alternate Packaging
    Part Status : Active
    Transistor Type : NPN
    Current - Collector (Ic) (Max) : 600mA
    Voltage - Collector Emitter Breakdown (Max) : 140V
    Vce Saturation (Max) @ Ib, Ic : 250mV @ 5mA, 50mA
    Current - Collector Cutoff (Max) : 100nA
    DC Current Gain (hFE) (Min) @ Ic, Vce : 60 @ 10mA, 5V
    Power - Max : 225mW
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Surface Mount
    Package / Case : TO-236-3, SC-59, SOT-23-3
    Supplier Device Package : SOT-23-3 (TO-236)

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