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羅斌森

  • MJ802G

  • Manufacturer : ON Semiconductor
    Packaging : Tray
    Part Status : Active
    Transistor Type : NPN
    Current - Collector (Ic) (Max) : 30A
    Voltage - Collector Emitter Breakdown (Max) : 90V
    Vce Saturation (Max) @ Ib, Ic : 800mV @ 750mA, 7.5A
    Current - Collector Cutoff (Max) : 1mA (ICBO)
    DC Current Gain (hFE) (Min) @ Ic, Vce : 25 @ 7.5A, 2V
    Power - Max : 200W
    Frequency - Transition : 2MHz
    Operating Temperature : -65°C ~ 200°C (TJ)
    Mounting Type : Through Hole
    Package / Case : TO-204AA, TO-3
    Supplier Device Package : TO-204 (TO-3)

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