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羅斌森

  • HGTP5N120BND

  • Manufacturer : ON Semiconductor
    Packaging : Tube
    Part Status : Not For New Designs
    IGBT Type : NPT
    Voltage - Collector Emitter Breakdown (Max) : 1200V
    Current - Collector (Ic) (Max) : 21A
    Current - Collector Pulsed (Icm) : 40A
    Vce(on) (Max) @ Vge, Ic : 2.7V @ 15V, 5A
    Power - Max : 167W
    Switching Energy : 450μJ (on), 390μJ (off)
    Input Type : Standard
    Gate Charge : 53nC
    Td (on/off) @ 25°C : 22ns/160ns
    Test Condition : 960V, 5A, 25 Ohm, 15V
    Reverse Recovery Time (trr) : 65ns
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Through Hole
    Package / Case : TO-220-3
    Supplier Device Package : TO-220-3

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