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羅斌森

  • FGA25N120ANTDTU

  • Manufacturer : ON Semiconductor
    Packaging : Tube
    Alternate Packaging
    Part Status : Active
    IGBT Type : NPT and Trench
    Voltage - Collector Emitter Breakdown (Max) : 1200V
    Current - Collector (Ic) (Max) : 50A
    Current - Collector Pulsed (Icm) : 90A
    Vce(on) (Max) @ Vge, Ic : 2.65V @ 15V, 50A
    Power - Max : 312W
    Switching Energy : 4.1mJ (on), 960μJ (off)
    Input Type : Standard
    Gate Charge : 200nC
    Td (on/off) @ 25°C : 50ns/190ns
    Test Condition : 600V, 25A, 10 Ohm, 15V
    Reverse Recovery Time (trr) : 350ns
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Through Hole
    Package / Case : TO-3P-3, SC-65-3
    Supplier Device Package : TO-3P

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