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羅斌森
羅斌森
  • FDFC3N108

  • Manufacturer : ON Semiconductor
    Packaging : Tape & Reel (TR)
    Part Status : Obsolete
    FET Type : N-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 20V
    Current - Continuous Drain (Id) @ 25°C : 3A (Ta)
    Drive Voltage (Max Rds On, Min Rds On) : 2.5V, 4.5V
    Rds On (Max) @ Id, Vgs : 70 mOhm @ 3A, 4.5V
    Vgs(th) (Max) @ Id : 1.5V @ 250μA
    Gate Charge (Qg) (Max) @ Vgs : 4.9nC @ 4.5V
    Vgs (Max) : ±12V
    Input Capacitance (Ciss) (Max) @ Vds : 355pF @ 10V
    FET Feature : Schottky Diode (Isolated)
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Surface Mount
    Supplier Device Package : SuperSOT?-6
    Package / Case : SOT-23-6 Thin, TSOT-23-6

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