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產(chǎn)品系列

羅斌森

  • FDZ3N513ZT

  • Manufacturer : ON Semiconductor
    Packaging : Tape & Reel (TR)
    Part Status : Obsolete
    FET Type : N-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 30V
    Current - Continuous Drain (Id) @ 25°C : 1.1A (Ta)
    Drive Voltage (Max Rds On, Min Rds On) : 3.2V, 4.5V
    Rds On (Max) @ Id, Vgs : 462 mOhm @ 300mA, 4.5V
    Vgs(th) (Max) @ Id : 1.5V @ 250μA
    Gate Charge (Qg) (Max) @ Vgs : 1nC @ 4.5V
    Vgs (Max) : +5.5V, -0.3V
    Input Capacitance (Ciss) (Max) @ Vds : 85pF @ 15V
    FET Feature : Schottky Diode (Body)
    Power Dissipation (Max) : 1W (Ta)
    Operating Temperature : -55°C ~ 125°C (TJ)
    Mounting Type : Surface Mount
    Supplier Device Package : 4-WLCSP (0.96x0.96)
    Package / Case : 4-UFBGA, WLCSP

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